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Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation.
- Source :
- Journal of Applied Physics; 10/1/2004, Vol. 96 Issue 7, p3945-3948, 4p, 1 Black and White Photograph, 1 Diagram, 3 Graphs
- Publication Year :
- 2004
-
Abstract
- Oxidation of an AlO<subscript>x</subscript> insulating barrier in a magnetic tunneling junction (MTJ) was carried out by a tilted-plasma oxidation method. It was found that the tilted-plasma oxidation induced a gradual change in the extent of oxidation of an insulating layer, which consequently led to a gradual change in the tunneling magnetoresistance (TMR) and specific junction resistance (RA) of the MTJ. We found a linear relation in the TMR versus RA curve with positive and negative slopes for less- and overoxidized junctions, respectively, and a parabolic relation for optimally oxidized junctions. The crossover in the TMR versus RA curves provides an effective and useful way to optimize (and monitor) the oxidation condition of a tunneling barrier in MTJs especially of a tunneling barrier less than 10 Å thick. The tunneling junctions were also investigated after thermal annealing at various temperatures. The observations after thermal annealing were found to be consistent with transmission electrons microscopy images and a scenario of the partial formation of an additional ultrathin tunneling barrier at the top surface of the bottom magnetic layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 96
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 14546508
- Full Text :
- https://doi.org/10.1063/1.1792386