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Tunnel junctions for ohmic intra-device contacts on GaSb-substrates.
- Source :
- Applied Physics Letters; 9/20/2004, Vol. 85 Issue 12, p2388-2389, 2p, 1 Diagram, 3 Graphs
- Publication Year :
- 2004
-
Abstract
- A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo- and heterojunctions of InAssSbd and GaSb to form a low resistive ohmic tunnel junction. The resitivity achieved was as low as 2.6310<superscript>-5</superscript> Ω cm<superscript>2</superscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14546656
- Full Text :
- https://doi.org/10.1063/1.1793349