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In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT.
- Source :
- Chinese Physics B; Mar2020, Vol. 29 Issue 4, p1-4, 4p
- Publication Year :
- 2020
-
Abstract
- The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications. The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier. F-based etching can be self-terminated after removing SiN, leaving the AlGaN barrier in the gate region. With this in-situ SiN and thin barrier etch-stop structure, the short channel effect can be suppressed, meanwhile achieving highly precisely controlled and low damage etching process. The device shows a maximum drain current of 1022 mA/mm, a peak transconductance of 459 mS/mm, and a maximum oscillation frequency (f<subscript>max</subscript>) of 248 GHz. [ABSTRACT FROM AUTHOR]
- Subjects :
- FREQUENCIES of oscillating systems
ELECTRON transport
Subjects
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 29
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 145621929
- Full Text :
- https://doi.org/10.1088/1674-1056/ab7746