A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS.

MLA

Li, Huanbo, et al. “A W-Band 6-Bit Phase Shifter With 7 DB Gain and 1.35° RMS Phase Error in 130 Nm SiGe BiCMOS.” IEEE Transactions on Circuits & Systems. Part II: Express Briefs, vol. 67, no. 10, Oct. 2020, pp. 1839–43. EBSCOhost, https://doi.org/10.1109/TCSII.2019.2944166.

APA

Li, H., Chen, J., Hou, D., & Hong, W. (2020). A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS. IEEE Transactions on Circuits & Systems. Part II: Express Briefs, 67(10), 1839–1843. https://doi.org/10.1109/TCSII.2019.2944166

Chicago

Li, Huanbo, Jixin Chen, Debin Hou, and Wei Hong. 2020. “A W-Band 6-Bit Phase Shifter With 7 DB Gain and 1.35° RMS Phase Error in 130 Nm SiGe BiCMOS.” IEEE Transactions on Circuits & Systems. Part II: Express Briefs 67 (10): 1839–43. doi:10.1109/TCSII.2019.2944166.