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A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor.
- Source :
- Angewandte Chemie International Edition; 10/12/2020, Vol. 59 Issue 42, p18605-18610, 6p
- Publication Year :
- 2020
-
Abstract
- A wide range of tunability in the physical parameters of a semiconductor used for X‐ray detection is desirable to achieve targeted performance optimization. However, in a dense‐phase semiconductor, fine‐tuning one parameter often leads to unwanted changes in other parameters. Herein, the intrinsic openness in an open‐framework semiconductor has been confirmed, for the first time, to be a key structural factor that weakens the mutual exclusivity of the adjustable physical parameters owing to a non‐linear control mechanism. The controllable doping of S in a zeolitic In–Se host results in an optimal balance between resistivity, band gap, and carrier mobility, which finally results in an excellent X‐ray detector with a high figure of merit for the mobility–lifetime product (7.12×10−4 cm2 V−1); this value is superior to that of a commercial α‐Se detector. The current strategy of choosing open‐framework semiconductor materials opens a new window for targeting high‐performance X‐ray detection. [ABSTRACT FROM AUTHOR]
- Subjects :
- X-ray detection
SEMICONDUCTOR materials
BAND gaps
SEMICONDUCTORS
DETECTORS
Subjects
Details
- Language :
- English
- ISSN :
- 14337851
- Volume :
- 59
- Issue :
- 42
- Database :
- Complementary Index
- Journal :
- Angewandte Chemie International Edition
- Publication Type :
- Academic Journal
- Accession number :
- 146251132
- Full Text :
- https://doi.org/10.1002/anie.202010290