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Magnetoresistance, Hall Effect, and Shubnikov-de Haas Effect in Antiferromagnetic Kondo Semimetal CeRu2Al10.

Authors :
Tomoya Kubo
Masahito Sakoda
Eiichi Matsuoka
Taichi Terashima
Naoki Kikugawa
Shinya Uji
Hitoshi Sugawara
Source :
Journal of the Physical Society of Japan; 11/15/2020, Vol. 89 Issue 11, p1-7, 7p
Publication Year :
2020

Abstract

To investigate the electronic state of CeRu2Al10, which exhibits an unusual antiferromagnetic order below TN = 27K, we measured the electrical resistivity, the transverse magnetoresistance (TMR), the Hall resistivity H, and the Shubnikov-de Haas (SdH) effect at low temperatures down to ~20mK and high magnetic fields up to 17.8 T. The temperature dependence of P at zero magnetic field exhibits a T 2 dependence below ~0.7 K, indicating a Fermi-liquid ground state. The TMR increases with increasing the magnetic field for a wide range of field directions except for particular directions around H // α, where the TMR shows a broad maximum at ~12 T. The field dependence of PH for H // α shows an evident increase around this field, suggesting a marked change in the mobility of carriers. The SdH effect measurements at temperatures lower than those of our previous work depicted the Fermi surface (FS) topology in more detail and confirmed the small size of the FS (SdH frequency F ~ 210 T). Relatively heavy cyclotron effective masses of up to 3.6m0 (m0: rest mass of electron) with a large anisotropy were observed despite the small carrier density. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00319015
Volume :
89
Issue :
11
Database :
Complementary Index
Journal :
Journal of the Physical Society of Japan
Publication Type :
Academic Journal
Accession number :
146334338
Full Text :
https://doi.org/10.7566/JPSJ.89.114704