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Antimony Selenide Thin Film Solar Cells with an Electron Transport Layer of Alq3.

Authors :
Shi, Wen-Jian
Kan, Ze-Ming
Cheng, Chuan-Hui
Li, Wen-Hui
Song, Hang-Qi
Li, Meng
Yu, Dong-Qi
Du, Xiu-Yun
Liu, Wei-Feng
Jin, Sheng-Ye
Cong, Shu-Lin
Source :
Chinese Physics Letters; Oct2020, Vol. 37 Issue 10, p1-6, 6p
Publication Year :
2020

Abstract

We fabricated Sb<subscript>2</subscript>Se<subscript>3</subscript> thin film solar cells using tris(8-hydroxy-quinolinato) aluminum (Alq<subscript>3</subscript>) as an electron transport layer by vacuum thermal evaporation. Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) was used as a hole transport layer. We took ITO/NPB/Sb<subscript>2</subscript>Se<subscript>3</subscript>/Alq<subscript>3</subscript>/Al as the device architecture. An open circuit voltage (V<subscript>oc</subscript>) of 0.37 V, a short circuit current density (J<subscript>sc</subscript>) of 21.2 mA/cm<superscript>2</superscript>, and a power conversion efficiency (PCE) of 3.79% were obtained on an optimized device. A maximum external quantum efficiency of 73% was achieved at 600 nm. The J<subscript>sc</subscript>, V<subscript>oc</subscript>, and PCE were dramatically enhanced after introducing an electron transport layer of Alq<subscript>3</subscript>. The results suggest that the interface state density at Sb<subscript>2</subscript>Se<subscript>3</subscript>/Al interface is decreased by inserting an Alq<subscript>3</subscript> layer, and the charge recombination loss in the device is suppressed. This work provides a new electron transport material for Sb<subscript>2</subscript>Se<subscript>3</subscript> thin film solar cells. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0256307X
Volume :
37
Issue :
10
Database :
Complementary Index
Journal :
Chinese Physics Letters
Publication Type :
Academic Journal
Accession number :
146552659
Full Text :
https://doi.org/10.1088/0256-307X/37/10/108401