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High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells.
- Source :
- Applied Physics Letters; 10/19/2020, Vol. 117 Issue 16, p1-5, 5p
- Publication Year :
- 2020
-
Abstract
- Internal quantum efficiency (IQE) and stimulated emission properties of AlGaN-based UV-C multiple quantum wells grown on c-plane sapphire substrates were assessed using photoluminescence spectroscopy. The IQEs were estimated to be 53% at room temperature and 16% at 750 K. Furthermore, optically pumped stimulated emission was clearly observed at room temperature. The threshold excitation power densities were estimated to be 13 kW/cm<superscript>2</superscript> at 10 K and 69 kW/cm<superscript>2</superscript> at room temperature. The temperature dependence of the threshold excitation power density suggested that the mechanism of optical gain formation changed from excitonic transition to degenerated electron–hole plasma between 200 and 250 K. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 117
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 146585291
- Full Text :
- https://doi.org/10.1063/5.0027697