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Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3.
- Source :
- Chinese Physics B; Jun2020, Vol. 29 Issue 7, p1-6, 6p
- Publication Year :
- 2020
-
Abstract
- Spin–orbit torque (SOT) effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices. Recently, topological insulators (TIs) have gained extensive attention, as they are demonstrated to maintain a large effective spin Hall angle (), even at room temperature. However, molecular beam epitaxy (MBE), as a precise deposition method, is required to guarantee favorable surface states of TIs, which hinders the prospect of TIs towards industrial application. In this paper, we demonstrate that Bi<subscript>2</subscript>Te<subscript>3</subscript> films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy. By harmonic Hall measurement, a high SOT efficiency (8.7 ± 0.9 Oe/(10<superscript>9</superscript> A/m<superscript>2</superscript>)) and a large (3.3±0.3) are obtained at room temperature. Besides, we also observe an ultra-low critical switching current density (9.7×10<superscript>9</superscript> A/m<superscript>2</superscript>). Moreover, the low-power characteristic of the sputtered Bi<subscript>2</subscript>Te<subscript>3</subscript> film is investigated by drawing a comparison with different sputtered SOT sources. Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 29
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 146654139
- Full Text :
- https://doi.org/10.1088/1674-1056/ab9439