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Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering.
- Source :
- Coatings (2079-6412); Oct2020, Vol. 10 Issue 10, p994-994, 1p
- Publication Year :
- 2020
-
Abstract
- Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga<subscript>2</subscript>O<subscript>3</subscript>/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga<subscript>2</subscript>O<subscript>3</subscript> at 600 °C can improve the crystal quality of Ga<subscript>2</subscript>O<subscript>3</subscript> thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga<subscript>2</subscript>O<subscript>3</subscript> at 600 °C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga<subscript>2</subscript>O<subscript>3</subscript> thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO<subscript>2</subscript> layer inserted between Ga<subscript>2</subscript>O<subscript>3</subscript> and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20796412
- Volume :
- 10
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Coatings (2079-6412)
- Publication Type :
- Academic Journal
- Accession number :
- 146669133
- Full Text :
- https://doi.org/10.3390/coatings10100994