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Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes.
- Source :
- Chinese Physics Letters; Sep2004, Vol. 21 Issue 9, p1845-1847, 3p
- Publication Year :
- 2004
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 21
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14678082