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Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes.

Authors :
Li Zhong-Hui
Yu Tong-Jun
Yang Zhi-Jian
Tong Yu-Zhen
Zhang Guo-Yi
Feng Yu-Chun
Guo Bao-Ping
Niu Han-Ben
Source :
Chinese Physics Letters; Sep2004, Vol. 21 Issue 9, p1845-1847, 3p
Publication Year :
2004

Details

Language :
English
ISSN :
0256307X
Volume :
21
Issue :
9
Database :
Complementary Index
Journal :
Chinese Physics Letters
Publication Type :
Academic Journal
Accession number :
14678082