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Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO2 fluid.
- Source :
- Applied Physics Express; Nov2020, Vol. 13 Issue 11, p1-5, 5p
- Publication Year :
- 2020
-
Abstract
- Supercritical CO<subscript>2</subscript> fluid is reported as an effective media in optimizing the SiO<subscript>2</subscript>/SiC interface in 4H-SiC(0001) MOS structures at a temperature as low as 150 °C. After SCCO<subscript>2</subscript> treatment, the breakdown electric field is improved to 10.7 MV cm<superscript>−1</superscript>. The near-interfacial oxide traps is decreased from 1.62 × 10<superscript>11</superscript> to 1.84 × 10<superscript>10</superscript> cm<superscript>−2</superscript>. The interface state density at 0.2 eV below E<subscript>C</subscript> is reduced from 6 × 10<superscript>12</superscript> to 2.5 × 10<superscript>12</superscript> eV<superscript>−1</superscript> cm<superscript>−2</superscript>. A dynamic reaction model is proposed to explain the defect passivation reaction. This technique can be effectively applied to interface semiconductor devices to enhance performance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 13
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 146928811
- Full Text :
- https://doi.org/10.35848/1882-0786/abbd25