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High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation.
- Source :
- IEEE Transactions on Electron Devices; Oct2020, Vol. 67 Issue 10, p4136-4140, 5p
- Publication Year :
- 2020
-
Abstract
- In this article, an ultrathin-barrier (UTB) AlGaN/GaN diode featuring metal–insulator–semiconductor (MIS)-gated hybrid anode (MG-HAD) and in situ Si<subscript>3</subscript>N<subscript>4</subscript> cap passivation is demonstrated. The intrinsic turn-on voltage (V<subscript>ON</subscript>) as low as 0.31 V determined by the as-grown AlGaN-barrier thickness (4.9 nm) is obtained and the V<subscript>ON</subscript> exhibits excellent uniformity. More importantly, benefit from the MIS-gated hybrid anode structure, the UTB MG-HAD features good thermal stability in reverse blocking capability. The device delivers a substantially low leakage less than 1~μm/mm at −300 V at high temperature (HT) up to 200 °C, which is more than 100 × lower than that in the reference device w/o gate dielectric. Besides, the device exhibits respectably improved dynamic characteristics due to the incorporation of in situ Si<subscript>3</subscript>N<subscript>4</subscript>-cap passivation layer and remote plasma pretreatment (RPP) prior to Al<subscript>2</subscript>O<subscript>3</subscript> gate dielectric deposition. The UTB MG-HAD featuring precisely V<subscript>ON</subscript> modulation and low reverse leakage is of great interest for power electronic applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 147319640
- Full Text :
- https://doi.org/10.1109/TED.2020.3018416