Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes.

MLA

Sampath, A. V., et al. “Growth and Fabrication of High Reverse Breakdown Heterojunction N-Gan: P-6H-Sic Diodes.” MRS Online Proceedings Library, vol. 743, no. 1, June 2002, pp. 1–6. EBSCOhost, https://doi.org/10.1557/PROC-743-L6.34.

APA

Sampath, A. V., Bhattacharyya, A., Singh, R., Eddy, C. R., Lamarre, P., Stacey, W. F., Morris, R. S., & Moustakas, T. D. (2002). Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes. MRS Online Proceedings Library, 743(1), 1–6. https://doi.org/10.1557/PROC-743-L6.34

Chicago

Sampath, A. V., A. Bhattacharyya, R. Singh, C. R. Eddy, P. Lamarre, W. F. Stacey, R. S. Morris, and T. D. Moustakas. 2002. “Growth and Fabrication of High Reverse Breakdown Heterojunction N-Gan: P-6H-Sic Diodes.” MRS Online Proceedings Library 743 (1): 1–6. doi:10.1557/PROC-743-L6.34.