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Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials.

Authors :
Xu, Ming
Mai, Xianliang
Lin, Jun
Zhang, Wei
Li, Yi
He, Yuhui
Tong, Hao
Hou, Xiang
Zhou, Peng
Miao, Xiangshui
Source :
Advanced Functional Materials; 12/8/2020, Vol. 30 Issue 50, p1-21, 21p
Publication Year :
2020

Abstract

Traditional von Neumann computing architecture with separated computation and storage units has already impeded the data processing performance and energy efficiency, calling for emerging neuromorphic electronic and optical devices and systems which can mimic the human brain to shift this paradigm. Material‐level innovation has become the key component to this revolution of information technology. Chalcogenide phase‐change material (PCM) as a well‐acknowledged data‐storage medium is a promising candidate to tackle this challenge. In this review, the use of PCMs to implement artificial neurons and synapses from both the electronic and optical respects is discussed, and in particular, the structure–property physics and transition dynamics that enable such brain‐inspired and in‐memory computing applications are emphasized. Recent advances on the atomic‐level amorphous and crystalline structures, transition mechanisms, materials optimization and design, neural and synaptic devices, brain‐inspired chips, and computing systems, as well as the future opportunities of PCMs, are summarized and discussed. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
30
Issue :
50
Database :
Complementary Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
147478034
Full Text :
https://doi.org/10.1002/adfm.202003419