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Self-powered, ultra-high detectivity and high-speed near-infrared photodetectors from stacked–layered MoSe2/Si heterojunction.
- Source :
- Nanotechnology; 2/12/2021, Vol. 32 Issue 7, p1-10, 10p
- Publication Year :
- 2021
-
Abstract
- Photodetectors based on high-performance, two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are limited by the synthesis of larger-area 2D TMDCs with high quality and optimized device structure. Herein, we report, for the first time, a uniform and stacked–layered MoSe<subscript>2</subscript> film of high quality was deposited onto Si substrate by using the pulsed laser deposition technique, and then in situ constructed layered MoSe<subscript>2</subscript>/Si 2D–3D vertical heterojunction. The resultant heterojunction showed a wide near-infrared response up to 1550 nm, with both ultra-high detectivity up to 1.4 × 10<superscript>14</superscript> Jones and a response speed approaching 120 ns at zero bias, which are much better than most previous 2D TMDC-based photodetectors and are comparable to that of commercial Si photodiodes. The high performance of the layered MoSe<subscript>2</subscript>/Si heterojunction can be attributed to be the high-quality stacked–layered MoSe<subscript>2</subscript> film, the excellent rectifying behavior of the device and the n-n heterojunction structure. Moreover, the defect-enhanced near-infrared response was determined to be Se vacancies from the density functional theory (DFT) simulations. These results suggest great potential of the layered MoSe<subscript>2</subscript>/Si 2D–3D heterojunctions in the field of communication light detection. More importantly, the in situ grown heterojunctions are expected to boost the development of other 2D TMDCs heterojunction-based optoelectronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 32
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 147502339
- Full Text :
- https://doi.org/10.1088/1361-6528/abc57d