Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film.

MLA

Nomura, K., et al. “Fabrication of MISFET Exhibiting Normally-off Characteristics Using a Single-Crystalline InGaO3(ZnO)5 Thin Film.” MRS Online Proceedings Library, vol. 747, no. 1, July 2002, pp. 1–6. EBSCOhost, https://doi.org/10.1557/PROC-747-V2.6.

APA

Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., & Hosono, H. (2002). Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film. MRS Online Proceedings Library, 747(1), 1–6. https://doi.org/10.1557/PROC-747-V2.6

Chicago

Nomura, K., H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono. 2002. “Fabrication of MISFET Exhibiting Normally-off Characteristics Using a Single-Crystalline InGaO3(ZnO)5 Thin Film.” MRS Online Proceedings Library 747 (1): 1–6. doi:10.1557/PROC-747-V2.6.