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Isotopically Enhanced Thermal Conductivity in Few-Layer Hexagonal Boron Nitride: Implications for Thermal Management.
- Source :
- ACS Applied Nano Materials; 12/24/2020, Vol. 3 Issue 12, p12148-12156, 9p
- Publication Year :
- 2020
-
Abstract
- Hexagonal boron nitride (h-BN) has been highlighted as a promising low-dimensional material for thermal management of next-generation devices. The theory predicts that the thermal conductivity of h-BN increases above the bulk value as the thickness is reduced, but previous reports on few-layer (5–11 layer) h-BN have shown the opposite trend. We investigated the effect of isotopic engineering on the thermal properties of 11-layer h-BN single-crystal flakes. The thermal conductivities of natural (22% <superscript>10</superscript>B, 78% <superscript>11</superscript>B) and monoisotopic (99% <superscript>10</superscript>B) h-BN were determined by a modified optothermal Raman method in the range 300–400 K. At room temperature, values were as high as (630 + 90/–65) Wm<superscript>–1</superscript> K<superscript>–1</superscript> for monoisotopic h-<superscript>10</superscript>BN and (405 + 87/–65) Wm<superscript>–1</superscript> K<superscript>–1</superscript> for natural h-BN, corresponding to an isotopic enhancement of close to 60%. Both measured thermal conductivities either match or exceed previously reported values for bulk crystals, while the isotopic enhancement factor is approximately 35% higher for the isotopically enriched thin crystal compared to the equivalent bulk materials. The work presented here demonstrates isotopic engineering as a viable route to increased thermal conductivity in atomically thin h-BN, making it an outstanding platform material for thermal management in next-generation device applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 25740970
- Volume :
- 3
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- ACS Applied Nano Materials
- Publication Type :
- Academic Journal
- Accession number :
- 147769713
- Full Text :
- https://doi.org/10.1021/acsanm.0c02647