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Highly‐digital voltage scalable 4‐bit flash ADC.

Authors :
Gupta, Ashima
Singh, Anil
Agarwal, Alpana
Source :
IET Circuits, Devices & Systems (Wiley-Blackwell); Jan2019, Vol. 13 Issue 1, p91-97, 7p
Publication Year :
2019

Abstract

This study describes the highly‐digital 4‐bit 200 MS flash analogue to digital converter (ADC) whose major part can be digitally synthesised thus achieving low power, reducing the time‐to‐market and is scalable with technology. The comparators used in the ADC consist of complementary metal–oxide–semiconductor (CMOS)‐based inverter and NAND‐NOR as standard cells. The complete flash ADC is designed in 180 nm CMOS technology with 1.8 V supply with the power consumption of 4.51 mW. The signal‐to‐noise and distortion ratio, signal‐to‐noise ratio and spurious‐free dynamic range are equal to 23.3, 25.2 and 30.1 dB. It provides an effective number of bits equal to 3.5. The differential non‐linearity (DNL) of this ADC is ± 0.25 LSB and integral non‐linearity (INL) is + 0.6 LSB. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1751858X
Volume :
13
Issue :
1
Database :
Complementary Index
Journal :
IET Circuits, Devices & Systems (Wiley-Blackwell)
Publication Type :
Academic Journal
Accession number :
148143406
Full Text :
https://doi.org/10.1049/iet-cds.2018.5148