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Comparison of conventional and cascode drive of SiC BJTs.
- Source :
- Journal of Engineering; Sep2019, Vol. 2019 Issue 9, p3793-3796, 4p
- Publication Year :
- 2019
-
Abstract
- This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when switching a current of 2.5 A and a voltage of 600 V in a buck converter. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20513305
- Volume :
- 2019
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 148148617
- Full Text :
- https://doi.org/10.1049/joe.2018.8034