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Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy.
- Source :
- Applied Physics Letters; 1/21/2021, Vol. 118 Issue 3, p1-6, 6p
- Publication Year :
- 2021
-
Abstract
- A fundamental understanding and control of impurity incorporation and charge carrier recombination are critical for emerging Sc<subscript>x</subscript>Al<subscript>1−</subscript><subscript>x</subscript>N electronics, optoelectronics, and photonics. We report on the photoluminescence properties of Sc<subscript>x</subscript>Al<subscript>1−</subscript><subscript>x</subscript>N grown by plasma-assisted molecular beam epitaxy with varying growth temperatures and Sc contents. Bright and broad emission comprising a dominant peak at ∼3.52 eV and a weak peak at ∼2.90 eV was observed in Sc<subscript>0.05</subscript>Al<subscript>0.95</subscript>N. The origin of the ∼3.52 eV emission line is attributed to charge carrier recombination from the localized excited state of (V<subscript>cation</subscript>-O<subscript>N</subscript>)<superscript>2−/−</superscript> to its ground state, whereas the second peak at ∼2.90 eV results from charge carrier recombination of isolated V cation 3 − / 2 − to the valence band. We further show that oxygen defect-related emission can be significantly suppressed by increasing growth temperature. This work sheds light on the recombination dynamics of photoexcited carriers in Sc<subscript>x</subscript>Al<subscript>1−</subscript><subscript>x</subscript>N and further offers insight into how to improve the optical and electrical properties of Sc<subscript>x</subscript>Al<subscript>1−</subscript><subscript>x</subscript>N that are relevant for a broad range of applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 118
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 148312325
- Full Text :
- https://doi.org/10.1063/5.0035026