Back to Search
Start Over
High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain‐Balanced GaInAs/GaAsP Quantum Wells.
- Source :
- Advanced Energy Materials; 1/27/2021, Vol. 11 Issue 4, p1-8, 8p
- Publication Year :
- 2021
-
Abstract
- High‐efficiency solar cells are essential for high‐density terrestrial applications, as well as space and potentially vehicle applications. The optimum bandgap for the terrestrial spectrum lies beyond the absorption range of a traditional dual junction GaInP/GaAs cell, with the bottom GaAs cell having higher bandgap energy than necessary. Lower energy bandgaps can be achieved with multiple quantum wells (QWs), but such a pathway requires advanced management of the epitaxial growth conditions in order to be useful. Strain‐balanced GaAsP/GaInAs QWs are incorporated into a single junction GaAs solar cell and a dual junction GaInP/GaAs solar cell, leading to 27.2% efficiency in the single junction device and a one‐sun record 32.9% efficiency in the tandem device. Good carrier collection and low non‐radiative recombination are observed in the cells with up to 80 QWs. The GaAs cells employ a rear‐heterojunction architecture to boost the open‐circuit voltage to over 1.04 V in the quantum well device, despite the large number of QWs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16146832
- Volume :
- 11
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Advanced Energy Materials
- Publication Type :
- Academic Journal
- Accession number :
- 148337416
- Full Text :
- https://doi.org/10.1002/aenm.202002874