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Online Thermal Resistance and Reliability Characteristic Monitoring of Power Modules With Ag Sinter Joining and Pb, Pb-Free Solders During Power Cycling Test by SiC TEG Chip.

Authors :
Kim, Dongjin
Nagao, Shijo
Chen, Chuantong
Wakasugi, Naoki
Yamamoto, Yasuyuki
Suetake, Aiji
Takemasa, Tetsu
Sugahara, Tohru
Suganuma, Katsuaki
Source :
IEEE Transactions on Power Electronics; May2021, Vol. 36 Issue 5, p4977-4990, 14p
Publication Year :
2021

Abstract

Despite the rapid progression of silicon carbide (SiC) power devices, the thermal characteristic evaluation during power cycling at high temperature (>200 °C) is an issue. In this article, a fast and miniaturized evaluation system with online thermal characteristic measurement function was introduced by an n-doped 4H SiC thermal engineering group (TEG) chip. Online thermal resistance measurement of a power module structure by Ag sinter joining with micron/submicron Ag particles paste in low temperature, low pressure, and cooling system by a thermal interface material bonding was performed. High-temperature reliability was systemically investigated by power cycling tests by switching on/off the power source which is connected to the SiC-TEG chip by Au wires. The total thermal resistance of the power module from the SiC-TEG chip to the cooling system increased from 0.5 to 0.53 K/W with the enhanced power source, and remained almost same after 20 000 power cycling at a swing temperature ΔTj of 150 °C. Furthermore, the SiC-TEG power module structure with the die attached with Pb and Pb-free solders, alongwith the same power source as sinter Ag paste was also measured. The Ag sinter joint possesses the lowest thermal resistance and highest high temperature reliability during power cycling compared with Pb and Pb-free die-attach materials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08858993
Volume :
36
Issue :
5
Database :
Complementary Index
Journal :
IEEE Transactions on Power Electronics
Publication Type :
Academic Journal
Accession number :
148380809
Full Text :
https://doi.org/10.1109/TPEL.2020.3031670