Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors.

This study focuses on the interaction between the oxide layer area of a transistor and its ferroelectric layer area. An experimental comparison of transistor oxide layer area demonstrates that the larger the ratio of oxide to ferroelectric layers, the larger the on/off ratio, thus improving performance. A subsequent experiment aimed to further demonstrate this in different sized devices, and changing the ratio of $\text{A}_{\text {HZO}}/\text{A}_{\text {SiO2}}$ (the area of HfZrOx divided by oxide layer) showed the same tendency as above, but also produced an unexpected finding in that a comparison of on/off ratio exhibits an abnormal electric characteristic. This study discusses this abnormal electric characteristic and proposes an explanatory physical model. [ABSTRACT FROM AUTHOR]