Burstein-Moss shift in impurity-compensated bulk Ga1-xInxSb substrates.

Authors :: Pino, R.
Ko, Y.
Dutta, P. S.
Guha, Shekhar
Gonzalez, Leonel P.
Source :: Journal of Applied Physics; 11/1/2004, Vol. 96 Issue 9, p5349-5352, 4p, 3 Graphs
Publication Year :: 2004
Abstract: The optical and electrical properties of tellurium- (Te) compensated Ga<subscript>1-x</subscript>In<subscript>x</subscript>Sb bulk crystals with alloy compositions ranging from x=0.37 to x=0.98 have been investigated. It has been observed that the Burstein-Moss shift plays an important role in the optical properties of Ga<subscript>1-x</subscript>In<subscript>x</subscript>Sb crystals for the alloy compositions greater than x=0.5 and net donor concentrations in the 2.9×10<superscript>17</superscript> to 2.6×10<superscript>18</superscript> cm<superscript>-3</superscript> range at 300 K. A good agreement has been obtained between the theory and experimental observations. Furthermore, electrical characterizations at 300 and 77 K show that Te compensates the native defects in Ga<subscript>1-x</subscript>In<subscript>x</subscript>Sb, irrespective of the alloy composition. [ABSTRACT FROM AUTHOR]