Nitrogen-induced ultralow power switching in flexible ZnO-based memristor for artificial synaptic learning.

An energy-efficient memristive synapse is highly desired for the development of brain-like neurosynaptic chips. In this work, a ZnO-based memristive synapse with ultralow-power consumption was achieved by simple N-doping. The introduction of N atoms, as the acceptor, reduces the carrier concentration and greatly increases the resistance of the ZnO film. The low energy consumption, which is as low as 60 fJ per synaptic event, can be achieved in our device. Essential synaptic learning functions have been demonstrated, including excitatory postsynaptic current, paired-pulse facilitation, and experience-dependent learning behaviors. Furthermore, the device can still exhibit the synaptic performance in the bent state or even after 100 bending cycles. Our memristive synapse is not only promising for energy-efficient neuromorphic computing systems but also suitable for the development of wearable neuromorphic electronics. [ABSTRACT FROM AUTHOR]