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Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process.
- Source :
- Applied Physics Letters; 2021, Vol. 118 Issue 11, p1-4, 4p
- Publication Year :
- 2021
-
Abstract
- Wide bandgap SnO<subscript>2</subscript> usually shows n-type conductivity due to intrinsic defects. Herein, we demonstrate the achievement of p-type conduction in SnO<subscript>2</subscript> with a two-step process, in which 3.3 at. % Mg-doped SnO<subscript>2</subscript> epitaxial films were first grown on c-Al<subscript>2</subscript>O<subscript>3</subscript> by pulsed laser deposition and then annealed in an oxygen atmosphere at proper temperature and time. An activation energy of around 85 meV revealed by temperature-dependent resistance measurements verifies Mg as a shallow acceptor in the p-type doping of SnO<subscript>2</subscript>. The post-annealing treatment at suitable temperature and time was found to be crucial to greatly enhance the p-type conductivity of Mg-SnO<subscript>2</subscript> by removing the interstitial Mg while maintaining the substitutional Mg in the SnO<subscript>2</subscript> lattice. A hole concentration of 1.43 × 10<superscript>17</superscript> cm<superscript>−3</superscript> and a hole mobility of 4 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> as determined by Hall-effect measurements were achieved for a sample annealed at optimized conditions of 600 °C and 0.5 h. The achievement of high-quality p-type Mg-SnO<subscript>2</subscript> epitaxial films demonstrates high potential in developing advanced optoelectronic devices based on p-n junctions of SnO<subscript>2</subscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 118
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 149421323
- Full Text :
- https://doi.org/10.1063/5.0045663