Back to Search Start Over

A CMOS Dual-Polarized Phased-Array Beamformer Utilizing Cross-Polarization Leakage Cancellation for 5G MIMO Systems.

Authors :
Pang, Jian
Li, Zheng
Luo, Xueting
Alvin, Joshua
Saengchan, Rattanan
Fadila, Ashbir Aviat
Yanagisawa, Kiyoshi
Zhang, Yi
Chen, Zixin
Huang, Zhongliang
Gu, Xiaofan
Wu, Rui
Wang, Yun
You, Dongwon
Liu, Bangan
Sun, Zheng
Zhang, Yuncheng
Huang, Hongye
Oshima, Naoki
Motoi, Keiichi
Source :
IEEE Journal of Solid-State Circuits; Apr2021, Vol. 56 Issue 4, p1310-1326, 17p
Publication Year :
2021

Abstract

This article introduces a power-efficient and low-cost CMOS 28-GHz phased-array beamformer supporting fifth-generation (5G) dual-polarized multiple-in-multiple-out (MIMO) (DP-MIMO) operation. To improve the cross-polarization (cross-pol.) isolation degraded by the antennas and propagation, a power-efficient analog-assisted cross-pol. leakage cancellation technique is implemented. After the high-accuracy cancellation, more than 41.3-dB cross-pol. isolation is maintained along with the transmitter array to the receiver array. The element-beamformer in this work adopts the compact neutralized bi-directional architecture featuring a minimized manufacturing cost. The proposed beamformer achieves 22% per path TX-mode efficiency and a 4.9-dB RX-mode noise figure. The required on-chip area for the beamformer is only 0.48 mm2. In over-the-air measurement, a 64-element dual-polarized phased-array module achieves 52.2-dBm saturated effective isotropic radiated power (EIRP). The 5G standard-compliant OFDMA-mode modulated signals of up to 256-QAM could be supported by the 64-element modules. With the help of the cross-pol. leakage cancellation technique, the proposed array module realizes improved DP-MIMO EVMs even under severe polarization coupling and rotation conditions. The measured DP-MIMO EVMs are 3.4% in both 64-QAM and 256-QAM. The consumed power per beamformer path is 186 mW in the TX mode and 88 mW in the RX mode. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189200
Volume :
56
Issue :
4
Database :
Complementary Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Academic Journal
Accession number :
149553172
Full Text :
https://doi.org/10.1109/JSSC.2020.3045258