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Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors.
- Source :
- Applied Physics Letters; 11/8/2004, Vol. 85 Issue 19, p4505-4507, 3p, 3 Graphs
- Publication Year :
- 2004
-
Abstract
- The thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities >10 A/cm<superscript>2</superscript>, indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14974933
- Full Text :
- https://doi.org/10.1063/1.1819505