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Non-volatile voltage control of in-plane and out-of-plane magnetization in polycrystalline Ni films on ferroelectric PMN–PT (001)pc substrates.
- Source :
- Journal of Applied Physics; 4/21/2021, Vol. 129 Issue 15, p1-8, 8p
- Publication Year :
- 2021
-
Abstract
- We identify room-temperature converse magnetoelectric effects (CMEs) that are non-volatile by using a single-crystal substrate of PMN–PT (001)<subscript>pc</subscript> (pc denotes pseudocubic) to impart voltage-driven strain to a polycrystalline film of Ni. An appropriate magnetic-field history enhances the magnetoelectric coefficient to a near-record peak of ∼10<superscript>−6</superscript> s m<superscript>−1</superscript> and permits electrically driven magnetization reversal of substantial net magnetization. In zero magnetic field, electrically driven ferroelectric domain switching produces large changes of in-plane magnetization that are non-volatile. Microscopically, these changes are accompanied by the creation and destruction of magnetic stripe domains, implying the electrical control of perpendicular magnetic anisotropy. Moreover, the stripe direction can be rotated by a magnetic field or an electric field, the latter yielding the first example of electrically driven rotatable magnetic anisotropy. The observed CMEs are associated with repeatable ferroelectric domain switching that yields a memory effect. This memory effect is well known for PMN–PT (110)<subscript>pc</subscript> but not PMN–PT (001)<subscript>pc</subscript>. Given that close control of the applied field is not required as for PMN–PT (110)<subscript>pc</subscript>, this memory effect could lead the way to magnetoelectric memories based on PMN–PT (001)<subscript>pc</subscript> membranes that switch at low voltage. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 129
- Issue :
- 15
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 149946387
- Full Text :
- https://doi.org/10.1063/5.0040258