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Oxygen vacancies modulating the photodetector performances in ε-Ga2O3 thin films.
- Source :
- Journal of Materials Chemistry C; 4/28/2021, Vol. 9 Issue 16, p5437-5444, 8p
- Publication Year :
- 2021
-
Abstract
- By acting as the trapping centers during charge carrier transfer, oxygen vacancy (VO) plays a critical role in oxide photoelectric devices. Herein, a post-annealing method was introduced to perfect the photodetection performances of ε-Ga<subscript>2</subscript>O<subscript>3</subscript> photodetectors (PDs) by improving the film quality and modulating the V<subscript>O</subscript> defect concentration. The native oxygen-deficient ε-Ga<subscript>2</subscript>O<subscript>3</subscript> epitaxial films fabricated via metal–organic chemical vapor deposition become highly dense and V<subscript>O</subscript>-less after oxidation annealing, leading to an enhanced performance, while they become V<subscript>O</subscript>-rich after reduction annealing to depress the PD property. Compared with the pristine PD, the crucial parameters of the devices with a lower V<subscript>O</subscript> concentration have been improved by 1–6 magnitude with a high photo-to-dark current ratio of 1.06 × 10<superscript>8</superscript>, a large responsivity of 1.368 A W<superscript>−1</superscript>, an excellent detectivity of 9.13 × 10<superscript>14</superscript> Jones, a superior linear dynamic range of 176.7 dB and an outstanding external quantum efficiency of 666.5% and a record-high rejection ratio (R<subscript>240</subscript>/R<subscript>400</subscript>) of 1.80 × 10<superscript>7</superscript>. As the V<subscript>O</subscript> defect is commonly ubiquitous in oxide materials, our investigation of regulating the V<subscript>O</subscript> concentrations in ε-Ga<subscript>2</subscript>O<subscript>3</subscript> and then exerting influences on the PD capabilities will provide principles for designing high-performance photoelectric devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20507526
- Volume :
- 9
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 150069750
- Full Text :
- https://doi.org/10.1039/d1tc00616a