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HfSiOx-gate GaN MOS-HEMTs for RF power transistor.
- Source :
- Proceedings of SPIE; 1/18/2021, Vol. 11686, p1168628-1168628, 1p
- Publication Year :
- 2021
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 11686
- Database :
- Complementary Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Conference
- Accession number :
- 150286404
- Full Text :
- https://doi.org/10.1117/12.2577403