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An Improved Nonlinear Model for Millimeter-Wave InP HBT Including DC/AC Dispersion Effects.
- Source :
- IEEE Microwave & Wireless Components Letters; May2021, Vol. 31 Issue 5, p465-468, 4p
- Publication Year :
- 2021
-
Abstract
- An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15311309
- Volume :
- 31
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Microwave & Wireless Components Letters
- Publication Type :
- Academic Journal
- Accession number :
- 150286708
- Full Text :
- https://doi.org/10.1109/LMWC.2021.3068145