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Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma.
- Source :
- Japanese Journal of Applied Physics; May2021, Vol. 60 Issue 5, p1-6, 6p
- Publication Year :
- 2021
-
Abstract
- In<subscript>2</subscript>O<subscript>3</subscript> films were deposited on c-plane sapphire substrates by using pulsed laser deposition (PLD) without and with oxygen plasma at various growth temperature. The crystal structure, optical properties and surface morphologies were determined by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometer and atomic force microscope. XRD analysis revealed that all films have the body-centered cubic structure with a preferable (222) orientation. The results of XRC, Raman spectroscopy and spectrophotometer prove the superiority of plasma-assisted PLD. The low temperature growth of crystal In<subscript>2</subscript>O<subscript>3</subscript> film paves the way to be compatible with the established silicon microfabrication processes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00214922
- Volume :
- 60
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 150334298
- Full Text :
- https://doi.org/10.35848/1347-4065/abf6e6