Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma.

In₂O₃ films were deposited on c-plane sapphire substrates by using pulsed laser deposition (PLD) without and with oxygen plasma at various growth temperature. The crystal structure, optical properties and surface morphologies were determined by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometer and atomic force microscope. XRD analysis revealed that all films have the body-centered cubic structure with a preferable (222) orientation. The results of XRC, Raman spectroscopy and spectrophotometer prove the superiority of plasma-assisted PLD. The low temperature growth of crystal In₂O₃ film paves the way to be compatible with the established silicon microfabrication processes. [ABSTRACT FROM AUTHOR]