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Theoretical Prediction of High-Performance Room-Temperature InGaAs/Si Single-Photon Avalanche Diode Fabricated by Semiconductor Interlayer Bonding.
- Source :
- IEEE Transactions on Electron Devices; Apr2021, Vol. 68 Issue 4, p1694-1701, 8p
- Publication Year :
- 2021
-
Abstract
- Single-photon avalanche diode (SPAD) is an ultrasensitive device for the detection of weak signals. Epitaxial InP-based devices exhibit poor avalanche characteristics and poor compatibility with Si complementary metal oxide semiconductor (CMOS) circuit, and epitaxial Si-based devices show high dark count rate (DCR) and limited detection wavelength. Here we first show a new generation of InGaAs-on-Si SPADs, achieved by semiconductor interlayer bonding, for the detection of 1550-nm infrared signals theoretically. This wafer-bonded InGaAs/Si SPAD has enabled a significant step-change in performance. The dark current of this SPAD is four orders of magnitude lower than that of the epitaxial ones (300 K). High gain-bandwidth-product of 254 and 353 GHz is achieved at the gain of ~ 24 and ~ 36, respectively, for the wafer-bonded SPAD with polycrystalline Si bonding layer at InGaAs/Si bonded interface. In comparison with epitaxial SPADs, the wafer-bonded ones exhibit low DCR (~ 10<superscript>5</superscript> Hz at 10% V<subscript>br</subscript>), high single photon detection efficiency (~ 24 % at 10% V<subscript>br</subscript>), and high pulse repetition rate (1 GHz at 5% V<subscript>br</subscript>) at 300 K. These results indicate that utilizing the wafer-bonded platform, the route toward high-performance InGaAs-on-Si SPAD arrays for use in future eye-safe laser radar (LIDAR) and quantum communication at room temperature (RT) is expected to be achieved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 150518045
- Full Text :
- https://doi.org/10.1109/TED.2021.3058598