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p-n heterojunctions composed of two-dimensional molecular crystals for high-performance ambipolar organic field-effect transistors.

Authors :
Yao, Jiarong
Tian, Xinzi
Yang, Shuyuan
Yang, Fangxu
Li, Rongjin
Hu, Wenping
Source :
APL Materials; May2021, Vol. 9 Issue 5, p1-7, 7p
Publication Year :
2021

Abstract

Bilayer p-n heterojunctions are promising structures to construct ambipolar organic field-effect transistors (aOFETs) for organic integrated circuits. However, due to the lack of effective strategies for high-quality p-n heterojunctions with clear interfaces, the performance of aOFETs is commonly and substantially lower than that of their unipolar counterparts, which hinders the development of aOFETs toward practical applications. Herein, a one-step solution crystallization strategy was proposed for the preparation of high-quality bilayer p-n heterojunctions. A mixed solution of a p- and an n-type organic semiconductor was dropped on a liquid substrate, and vertical phase separation occurred spontaneously during crystallization to produce bilayer p-n heterojunctions composed of molecularly thin two-dimensional molecular crystals. Due to the clear interface of the bilayer p-n heterojunctions, the maximum mobility (average mobility) reached 1.96 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> (1.12 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript>) for holes and 1.27 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> (0.61 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript>) for electrons in ambient air. So far as we know, these values were the highest among double-channel aOFETs measured in ambient air. This work provides a simple yet efficient strategy to construct high-quality bilayer p-n heterojunctions, which lays a foundation for their application in high-performance optoelectronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2166532X
Volume :
9
Issue :
5
Database :
Complementary Index
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
150575511
Full Text :
https://doi.org/10.1063/5.0048790