Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact.

Contact between two-dimensional (2D) transition metal dichalcogenides and certain metals (Au, Pd, Ti, or Pt) results in strong Fermi-level pinning and high resistance. Furthermore, to construct a high-performance device, accurate measurement of the contact resistance and Schottky barrier height (SBH) is crucial. In this study, the SBH and the resistance of a 2H phase few-layer molybdenum telluride (2H–MoTe₂) film, which was grown by metal organic chemical vapor deposition, and a Ti/Au electrode were determined by analyzing the high-temperature thermal transmission properties and the transmission line method, respectively. The carrier mobility, ON/OFF ratio, SBH, and contact resistance of the few-layer MoTe₂ device, which has p-type behavior with Ti/Au electrode, were found to be 53.7 cm² V⁻¹ s⁻¹, 3.44 × 10⁶, 163 meV, and 10.2 M Ω , respectively. [ABSTRACT FROM AUTHOR]