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Enhanced dielectric temperature stability and energy-storage properties of (Y0.5Nb0.5)4+ co-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free relaxor ceramics.

Authors :
Wang, Han
Li, Qiang
Jia, Yuxin
Yadav, Arun Kumar
Yan, Benben
Shen, Qi
Li, Mengyuan
Quan, Qifeng
Fan, Huiqing
Source :
Journal of Materials Science; Sep2021, Vol. 56 Issue 26, p14672-14683, 12p, 1 Color Photograph, 1 Chart, 10 Graphs
Publication Year :
2021

Abstract

(Bi<subscript>0.5</subscript>Na<subscript>0.5</subscript>)<subscript>0.94</subscript>Ba<subscript>0.06</subscript>Ti<subscript>1−x</subscript>(Y<subscript>0.5</subscript>Nb<subscript>0.5</subscript>)<subscript>x</subscript>O<subscript>3</subscript> (abbreviated as BNTBT-100xYN) lead-free relaxor ceramics were designed and prepared using a traditional solid-state sintering technique. The influences of the introduction of (Y<subscript>0.5</subscript>Nb<subscript>0.5</subscript>)<superscript>4+</superscript> complex ions for the dielectric properties and energy storage performances of BNTBT-100xYN ceramics were systematically studied. All samples exhibited a typical pseudo-cubic symmetry structure and obtained the dense microstructure with the uniform distribution of all elements. The ergodic relaxor behavior of all ceramics was observed and revealed a trend of increase as a function of composition. It accelerated the improvement of the temperature stability of the dielectric constant. All samples showed a single grain conduction mechanism and the activation energy decreased with the addition of composition. It is related to the generation of oxygen vacancies induced by the defect dipoles. BNTBT-6YN ceramic revealed excellent dielectric temperature stability within the temperature range from 87 to 479 °C and the loss tangent less than 0.05 between 25 °C and 474 °C. Besides, a high recoverable energy density of ~ 0.91 J/cm<superscript>3</superscript> with the corresponding efficiency of ~ 78.5% at applied 115 kV/cm field was achieved for BNTBT-5YN ceramic. Hence, BNTBT-5YN and BNTBT-6YN ceramics will become one of the outstanding dielectric ceramics for the electronic components. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00222461
Volume :
56
Issue :
26
Database :
Complementary Index
Journal :
Journal of Materials Science
Publication Type :
Academic Journal
Accession number :
151084733
Full Text :
https://doi.org/10.1007/s10853-021-06193-6