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KMC-based POM flash cell optimization and time-dependent performance investigation.

Authors :
Ding, Jie
Mu, Dejiang
Badami, Oves
Medina-Bailon, Cristina
Chang, Xiaomin
Nagy, Daniel
Lapham, Paul
Georgiev, Vihar
Asenov, Asen
Source :
Semiconductor Science & Technology; Jul2021, Vol. 36 Issue 7, p1-7, 7p
Publication Year :
2021

Abstract

The beneficial characteristics of polyoxometalate (POM) molecule-based flash memory cells provide interesting opportunities for scaling beyond the limitations of conventional flash cells. In this paper, we study the write, erase, and retention times of POM flash cells using a kinetic Monte Carlo method implemented in the multi-scale Nano-Electronic Simulation Software simulation framework. The POM flash structure is optimized by studying the tradeoffs between program/erase time and retention time. Based on the optimized POM flash structure, the POM molecular layer charging and discharging processes as well as the corresponding threshold voltage variation are analyzed. The distributions of write, erase, and retention times are simulated and analyzed when studying the POM flash dynamic charging and discharging characteristics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02681242
Volume :
36
Issue :
7
Database :
Complementary Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
151155056
Full Text :
https://doi.org/10.1088/1361-6641/ac008b