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Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs.
- Source :
- IEEE Electron Device Letters; Jul2021, Vol. 42 Issue 7, p986-989, 4p
- Publication Year :
- 2021
-
Abstract
- In a ${p}$ -channel field-effect-transistor (${p}$ -FET) bridge HEMT device recently realized on a commercial ${p}$ -GaN/AlGaN/GaN-on-Si power HEMT epi-wafer, it is revealed that the device’s reverse-conduction turn-on voltage (${V}_{\text {RT}}$) can be effectively decoupled from the forward threshold voltage (${V}_{\text {TH}}$) of Schottky-type ${p}$ -GaN gate HEMTs. Unlike the conventional Schottky-type ${p}$ -GaN gate HEMTs, of which ${V}_{\text {RT}}$ is closely linked to ${V}_{\text {TH}}$ , the ${p}$ -FET-bridge HEMT enables separate designs of ${V}_{\text {RT}}$ and $V_{\text {TH}}$ so that low-loss reverse conduction and high threshold voltage can be simultaneously realized. In addition, ${V}_{\text {RT}}$ can be further reduced by engineering the AlGaN barrier layer, which will also benefit a lower channel sheet resistance without lowering ${V}_{\text {TH}}$. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 42
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 151282529
- Full Text :
- https://doi.org/10.1109/LED.2021.3077081