High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications.

WSe₂ is thought to be one of the best emerging p-type transition metal dichalcogenide (TMD) materials for potential low-power complementary metal oxide semiconductor (CMOS) circuit applications. However, the contact barrier and the interface quality hinder the performance of p-type field effect transistors (FETs) with WSe₂ films. In this work, metals with different work functions—Pd, Pt, and Ag—were systematically investigated as contacts for WSe₂ to decrease the contact resistances at source/drain electrodes and potentially improve transistor performance. Optimized p-type multilayer WSe₂ FETs with Pd contacts were successfully fabricated, and excellent electrical characteristics were obtained: a hole mobility of 36 cm²V⁻¹ s⁻¹; a high on/off ratio, over 10⁶; and a record low sub-threshold swing, SS = 95 mV/dec, which may be attributed to the small Schottky barrier height of 295 meV between Pd and WSe₂, and strong Fermi-level pinning near the top of the valence band at the interface. Finally, a full-functional CMOS inverter was also demonstrated, consisting of a p-type WSe₂ FET together with a normal n-type MoS₂ FET. This confirmed the potential of TMD FETs in future low-power CMOS digital circuit applications. [ABSTRACT FROM AUTHOR]