Room-temperature tunable microwave properties of strained SrTiO3 films.

Authors :: Wontae Chang
Kirchoefer, Steven W.
Pond, Jeffrey M.
Bellotti, Jeffrey A.
Qadri, Syed B.
Haeni, Jeffrey H.
Schlom, Darrell G.
Source :: Journal of Applied Physics; 12/1/2004, Vol. 96 Issue 11, p6629-6633, 5p, 1 Black and White Photograph, 3 Charts, 6 Graphs
Publication Year :: 2004
Abstract: Structural distortion of ferroelectric thin films caused by film strain has a strong impact on the microwave dielectric properties. SrTiO<subscript>3</subscript> thin films epitaxially grown on (110) DyScO<subscript>3</subscript> substrates using molecular beam epitaxy are extremely strained (i.e., ∼1% in-plane tensional strain) from 3.905 Å of bulk SrTiO<subscript>3</subscript>. The room-temperature in-plane dielectric constant and its tuning of the films at 10 GHz are observed to be 6000 and 75% with an electric field of 1 V/μm, respectively. The control of strain in SrTiO<subscript>3</subscript> provides a basis for room-temperature tunable microwave applications by elevating its phase-transition peak to room temperature. [ABSTRACT FROM AUTHOR]