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Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor.
- Source :
- Applied Physics Letters; 8/28/2021, Vol. 119 Issue 6, p1-7, 7p
- Publication Year :
- 2021
-
Abstract
- Threshold voltage (V<subscript>TH</subscript>) instability has been studied in the as-fabricated p-GaN gated enhancement-mode high electron mobility transistors (p-GaN E-HEMTs) under a positive gate stress. A negative V<subscript>TH</subscript> shift (ΔV<subscript>TH</subscript>) obtained by dynamic measurement has been observed more severely when compared to the static one. The V<subscript>TH</subscript> deviation is attributed to the complicated influence of carrier transport behaviors in the p-GaN gate. The impacts of hole accumulation, trapping, and consumption on the V<subscript>TH</subscript> instability and drain current variation can be effectively distinguished according to the transfer characteristics obtained from the pulse I–V measurement. Moreover, the density of hole traps in the p-GaN gate is estimated to be around ∼2 × 10<superscript>11</superscript> cm<superscript>−2</superscript> by the capacitance–voltage measurement, and the energy level is calculated to be around E<subscript>V</subscript> + 0.62 eV by fitting the recovery curve of gate current after positive gate bias. This study focusing on the in-depth influence of different carrier behaviors on the gate performance can help with the understanding and further improvement of the dynamic instability and reliability of the GaN-based HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 119
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 151911030
- Full Text :
- https://doi.org/10.1063/5.0055530