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Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer.
- Source :
- Applied Physics Letters; 10/14/2021, Vol. 119 Issue 12, p1-5, 5p
- Publication Year :
- 2021
-
Abstract
- In this study, the influence of the HfO<subscript>x</subscript>N<subscript>y</subscript> interfacial layer (IL), interposed between the atomic layer deposited ferroelectric (FE) Hf<subscript>0.5</subscript>Zr<subscript>0.5</subscript>O<subscript>2</subscript> thin film and TiN top electrode, on the FE properties of such a film was examined. The HfO<subscript>x</subscript>N<subscript>y</subscript> IL decreased the relative proportion of the non-FE monoclinic phase, possibly due to the N-doping effect. Furthermore, the oxidation of the TiN top electrode was also suppressed by the sacrificial oxidation of the HfO<subscript>x</subscript>N<subscript>y</subscript> IL during the rapid thermal process. As a result, the double remanent polarization of a Hf<subscript>0.5</subscript>Zr<subscript>0.5</subscript>O<subscript>2</subscript> thin film could be enhanced from 40.2 to 48.2 μC/cm<superscript>2</superscript> by the positive-up-negative-down test, and its degradation by fatigue during the endurance test can also be decreased. This result demonstrates the significance of interfacial engineering to optimize the FE properties of Hf<subscript>0.5</subscript>Zr<subscript>0.5</subscript>O<subscript>2</subscript> films. [ABSTRACT FROM AUTHOR]
- Subjects :
- RAPID thermal processing
FERROELECTRICITY
TITANIUM nitride
THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 119
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 152621756
- Full Text :
- https://doi.org/10.1063/5.0065571