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Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD.
- Source :
- Materials (1996-1944); Sep2021, Vol. 14 Issue 18, p5339-5339, 1p
- Publication Year :
- 2021
-
Abstract
- This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 10<superscript>17</superscript>/cm<superscript>3</superscript> and 3 × 10<superscript>19</superscript>/cm<superscript>3</superscript> with adjustable hole mobility from 3 to 16 cm<superscript>2</superscript>/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (Mg<subscript>In</subscript>). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mg<subscript>i</subscript>), which has very low formation energy. [ABSTRACT FROM AUTHOR]
- Subjects :
- HOLE mobility
DOPING in sports
CHEMICAL vapor deposition
NITROGEN
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 14
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 152656630
- Full Text :
- https://doi.org/10.3390/ma14185339