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Drop-casting CsPbBr3 perovskite quantum dots as down-shifting layer enhancing the ultraviolet response of silicon avalanche photodiode.
- Source :
- Applied Physics Letters; 10/11/2021, Vol. 119 Issue 15, p1-4, 4p
- Publication Year :
- 2021
-
Abstract
- Since the absorption zone of ultraviolet (UV) photons with high energy is limited to a few tens of nm on the surface, the high defect density caused by the processes, such as ion implantation, leads to a weak response of the silicon avalanche photodiode (APD) in the ultraviolet band. In this work, the integration of the inorganic perovskite quantum dots (QDs) film by drop-casting as the down-shifting layer is reported for enhancing the UV response of Si APD. The light generated current increases 100% under the 365 nm light emitting diode. The response of the Si APD is improved in the entire ultraviolet band. In particular, the responsivity of APD is increased by 78% at 340 nm with an exceedingly EQE of 92%. In summary, the perovskite QDs film as a down-shifting layer provides an effective and low-cost method to improve the UV response of Si APD. [ABSTRACT FROM AUTHOR]
- Subjects :
- QUANTUM dots
PEROVSKITE
ION implantation
SILICON
PHASE shift (Nuclear physics)
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 119
- Issue :
- 15
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 153033992
- Full Text :
- https://doi.org/10.1063/5.0067710