Analysis and Design of a Charge Sampler With 70-GHz 1-dB Bandwidth in 130-nm SiGe BiCMOS.

This paper investigates an ultra-broadband sampling technique based on charge sampling using an Integrate-and-Hold Circuit (IHC) and ultra-short integration times. The charge sampling technique is mathematically analyzed in detail and compared to conventional switched-capacitor sampling. The mathematical analysis allows to predict the sampler bandwidth as well as the degradation of sampling precision due to analog circuit impairments such as integrator gain error, integration capacitor leakage, hold-mode droop, thermal noise, and clock jitter. Furthermore, design, simulation, and measurement results of an ultra-broadband charge sampler IC in SiGe BiCMOS technology are presented. The charge sampler IC achieves a 1dB bandwidth of 70 GHz. A resolution of better than 5.9 effective number of bits (ENOB) is measured from 0 to 70 GHz at a sampling rate of 5 GS/s. The results suggest that charge sampling using an IHC is a viable concept for ultra-broadband sampling. [ABSTRACT FROM AUTHOR]