Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga2O3/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector.

MLA

Yan, Zuyong, et al. “Reinforcement of Double Built-in Electric Fields in Spiro-MeOTAD/Ga2O3/Si P–i–n Structure for a High-Sensitivity Solar-Blind UV Photovoltaic Detector.” Journal of Materials Chemistry C, vol. 9, no. 41, Nov. 2021, pp. 14788–98. EBSCOhost, https://doi.org/10.1039/d1tc03359j.

APA

Yan, Z., Li, S., Yue, J., Ji, X., Liu, Z., Yang, Y., Li, P., Wu, Z., Guo, Y., & Tang, W. (2021). Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga2O3/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector. Journal of Materials Chemistry C, 9(41), 14788–14798. https://doi.org/10.1039/d1tc03359j

Chicago

Yan, Zuyong, Shan Li, Jianying Yue, Xueqiang Ji, Zeng Liu, Yongtao Yang, Peigang Li, Zhenping Wu, Yufeng Guo, and Weihua Tang. 2021. “Reinforcement of Double Built-in Electric Fields in Spiro-MeOTAD/Ga2O3/Si P–i–n Structure for a High-Sensitivity Solar-Blind UV Photovoltaic Detector.” Journal of Materials Chemistry C 9 (41): 14788–98. doi:10.1039/d1tc03359j.