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1 GeV proton damage in β-Ga2O3.
- Source :
- Journal of Applied Physics; 11/14/2021, Vol. 130 Issue 18, p1-9, 9p
- Publication Year :
- 2021
-
Abstract
- The changes of electrical properties and deep trap spectra induced in n-type β-Ga<subscript>2</subscript>O<subscript>3</subscript> by 1 GeV protons with a fluence of 4 × 10<superscript>13 </superscript>cm<superscript>−2</superscript> were studied. The carrier removal rates were ∼100 cm<superscript>−1</superscript> at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5–10 × 10<superscript>14 </superscript>cm<superscript>−2</superscript>), the removal rate was ∼400 cm<superscript>−1</superscript> for donor concentrations of 3 × 10<superscript>16 </superscript>cm<superscript>−3</superscript> and ∼100 cm<superscript>−1</superscript> for concentrations of <10<superscript>16 </superscript>cm<superscript>−3</superscript>. These removal rates were in stark contrast with modeling results that predicted the introduction rates of vacancies to be two orders of magnitude higher for 20 MeV protons. Measurements of deep electron and hole traps densities by deep level transient spectroscopy with electrical or optical injection (DLTS or ODLTS), and capacitance–voltage profiling under monochromatic light illumination showed that the 1 GeV proton irradiation resulted in the introduction of deep donors E2*(E<subscript>c</subscript>-0.75 eV) and E3 (E<subscript>c</subscript>-1 eV) and deep acceptors with optical ionization threshold near 2.3 eV producing a feature near 250 K in ODLTS and 3.1 eV with related ODLTS feature near 450 K. The total concentration of all deep traps was much lower than that necessary to explain the observed decrease in net donor density upon irradiation. The donor densities showed a nonuniform distribution in proton irradiated films with the concentration greatly decreased toward the surface. Possible reasons for the observed performance are discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 130
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 153550786
- Full Text :
- https://doi.org/10.1063/5.0068306