High-Current Omega-Shaped Gated MoS₂ Transistors.

2-D materials are promising for future advanced electronics beyond silicon due to their intrinsic ultrathin body for enhanced electrostatic gate control. Herein, an omega-shaped dual-gated MoS2 transistors based on Ag nanowire (NW) as buried gate are fabricated, and the omega-shaped gate architecture enables enhanced local gate controllability, leading to excellent electrical performance with an ON-/ OFF-current ratio of 108 and a subthreshold swing (SS) of 76 mV/dec at room temperature. By controlling the threshold voltage of the transistor with dual gate, an inverter and a NAND gate circuit are fabricated, and the voltage gain of inverters is 36 with high noise margin of 87% ${V}_{{\text{DD}}}$. This work demonstrates an avenue for high-current MoS2 transistors. [ABSTRACT FROM AUTHOR]